NDD05N50ZT4G(2013) 查看數據表（PDF） - ON Semiconductor
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NDD05N50ZT4G Datasheet PDF : 12 Pages
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NDF05N50Z, NDD05N50Z
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
NDF05N50Z
NDD05N50Z
RqJC
Junction−to−Ambient Steady State
(Note 3) NDF05N50Z
(Note 4) NDD05N50Z
(Note 3) NDD05N50Z−1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
Value
4.2
1.5
50
38
80
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
BVDSS
DBVDSS/
DTJ
IDSS
VGS = 0 V, ID = 1 mA
500
Reference to 25°C,
ID = 1 mA
VDS = 500 V, VGS = 0 V
25°C
150°C
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
IGSS
RDS(on)
VGS = ±20 V
VGS = 10 V, ID = 2.2 A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 50 mA
3.0
Forward Transconductance
gFS
VDS = 15 V, ID = 2.5 A
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Ciss
421
Output Capacitance (Note 6)
Coss
VDS = 25 V, VGS = 0 V,
50
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
8
(Note 6)
Total Gate Charge (Note 6)
Qg
9
Gate−to−Source Charge (Note 6)
Qgs
2
Gate−to−Drain (“Miller”) Charge
Qgd
(Note 6)
VDD = 250 V, ID = 5 A,
VGS = 10 V
5
Plateau Voltage
VGP
Gate Resistance
Rg
1.5
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 5 W
Fall Time
tf
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD
IS = 5 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS = 0 V, VDD = 30 V
Qrr
IS = 5 A, di/dt = 100 A/ms
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
Typ
0.6
1.25
3.9
3.5
530
68
15
18.5
4
10
6.5
4.5
11
15
24
14
255
1.25
Max
1
50
±10
1.5
4.5
632
80
25
28
6
15
8
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
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