NDD05N50ZT4G(2013) 查看數據表（PDF） - ON Semiconductor

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NDD05N50ZT4G
(Rev.:2013)

N-Channel Power MOSFET 500 V, 1.5 Ω

ON Semiconductor 

NDF05N50Z, NDD05N50Z

TYPICAL CHARACTERISTICS

100

10 50% (DUTY CYCLE)

20%

10%

1 5.0%

2.0%

1.0%

0.1

0.01

1E−06

SINGLE PULSE

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

PULSE TIME (s)

Figure 16. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z

LEADS

RqJA = 38°C/W

Steady State

1E+02 1E+03

HEATSINK

0.110″ MIN

Figure 17. Isolation Test Diagram

Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor

Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

6

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