NGD8201AN 查看數據表（PDF） - ON Semiconductor
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NGD8201AN Datasheet PDF : 8 Pages
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NGD8201N, NGD8201AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
td(off)
Fall Time (Resistive)
tf
Test Conditions
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW, RL = 33 W,
VGE = 5.0 V
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW,
L = 300 mH, VGE = 5.0 V
Turn−On Delay Time
Rise Time
td(on)
tr
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5 W,
VGE = 5.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature Min Typ Max Unit
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
TJ = 25°C
TJ = 175°C
6.0 8.0 10 mSec
6.0 8.0 10
4.0 6.0 8.0
8.0 10.5 14
3.0 5.0 7.0
5.0 7.0 9.0
1.5 3.0 4.5
5.0 7.0 10
1.0 1.5 2.0
1.0 1.5 2.0
4.0 6.0 8.0
3.0 5.0 7.0
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