NGTB20N135IHRWG(2013) 查看數據表（PDF） - ON Semiconductor
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NGTB20N135IHRWG Datasheet PDF : 10 Pages
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NGTB20N135IHRWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
200
VGE = 20 to 15 V
13 V
11 V
150
100
50
0
0
10 V
9V
8V
7V
1
2
3
45
6
78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
250
TJ = 150°C
200
VGE = 20 to 15 V
13 V
150
100
50
0
0
11 V
10 V
9V
8V
7V
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
250
VGE = 20 to 15 V
13 V 11 V
200
150
10 V
100
9V
50
TJ = −40°C
0
7V
8V
0
1
2
3
45
6
78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
160
140
120
TJ = 25°C
100
TJ = 150°C
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.00
IC = 40 A
100000
2.50
IC = 20 A
10000
Cies
2.00
IC = 10 A
1000
1.50
1.00
0.50
100
Coes
Cres
10
0.00
−75 −50 −25 0 25 50 75 100 125 150 175 200
1 TJ = 25°C
0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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