NGTB20N135IHRWG 查看數據表（PDF） - ON Semiconductor
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NGTB20N135IHRWG Datasheet PDF : 10 Pages
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NGTB20N135IHRWG
TYPICAL CHARACTERISTICS
70
16
60
14
50
12
10
40
TJ = 25°C
8
30
6
20
TJ = 150°C
4
10
2
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
VCE = 600 V
VGE = 15 V
IC = 20 A
50
100
150
200
250
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1.4
1.2
1.0
Eoff
0.8
0.6
0.4
0.2
0
0
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
td(off)
100
tf
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
10
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
7
VCE = 600 V
6 VGE = 15 V
TJ = 150°C
5 Rg = 10 W
4
3
1000
Eoff
100
td(off)
tf
2
VCE = 600 V
1
VGE = 15 V
TJ = 150°C
0
Rg = 10 W
10
5
20
35
50
65
80
5
20
35
50
65
80
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
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4
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