T14M1024A 查看數據表（PDF） - Taiwan Memory Technology

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T14M1024A

128K X 8 HIGH SPEED CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T14M1024A

RECOMMENDED OPERATING CONDITIONS

PARAMETER

Supply Voltage

Input Voltage, low

Input Voltage, high

Ambient Temperature

SYM

Vcc

VIL

VIH

TA

MIN

Typ-10%

-0.3

2.2

0

TYP

5

-

-

-

CAPACITANCE

PARAMETER

Input Capacitance

Input/ Output Capacitance

SYMBOL

CIN

CI/O

CONDITION

VIN = 0V

VOUT= 0V

Note: These parameters are sampled but not 100% tested.

MAX

Typ+10%

0.8

Vcc+0.3

70

MAX.

6

8

AC TEST CONDITIONS

PARAMETER

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Reference Level

Output Load

CONDITIONS

0V to 3V

3.0 ns

1.5V

CL =30pF,IOH /IOL = -2mA/4mA

UNIT

V

V

V

°C

UNIT

pF

pF

AC TEST LOADS AND WAVEFORM

OUTPUT

RL=50 ohm

Vt=1.5V

Zo=50 ohm

30pF

5V

OUTPUT

R1 480 ohm

5pF

Including

Jig and

Scope

R2

255 ohm

(For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW )

TM Technology Inc. reserves the right

P. 3

to change products or specifications without notice.

Publication Date: SEP. 2002

Revision:E

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