BD95830MUV(RevA) 查看數據表（PDF） - ROHM Semiconductor

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BD95830MUV
(Rev.:RevA)

Silicon Monolithic Integrated Circuit

ROHM Semiconductor 

2/4

○Electrical Characteristics (Unless otherwise noted, Ta=25℃ VCC=VREG, VIN1=VIN2=VINS=12V, VEN1=VEN2=3V, VOUT1=VOUT2=1.8V)

Parameter

Symbol

Standard Value

Unit

MIN.

TYP.

MAX.

Conditions

[Whole Device]

VINS Bias current

IINS

-

1.7

2.2

mA

VINS Standby current

IINS_stb

-

0

10

μA VEN1=VEN2=0V

EN Low Voltage1,2

VEN_low1,2

GND

-

0.3

V

EN High Voltage1,2

VEN_high1,2

2.2

-

15

V

EN Pull-down resistance1,2

REN1,2

28

48

68

kΩ

[5VLinear Regulator]

VREG Standby Voltage

VREG_stb

-

-

0.1

V VEN1=VEN2=0V

VREG Output Voltage

VREG

4.8

5.0

5.2

V

VINS=7.5V to 15V

IREG=10mA

[Under Voltage Lock Out]

UVLO threshold Voltage

VCC_UVLO

4.0

4.3

4.6

V VCC:Sweep up

UVLO hysteresis Voltage

dVCC_UVLO

100

160

220

mV VCC:Sweep down

[Over Voltage Protection]

OVP threshold Voltage1,2

[H3RegTM Control]

VOVP1,2

0.86

0.96

1.06

V

ON Time1,2

ton1,2

200

255

310

ns

MIN OFF Time1,2

toffmin1,2

300

550

-

ns

[FET Driver]

High side ON resistance1,2

Ron_high1,2

-

75

120

mΩ

Low side ON resistance 1,2

Ron_low1,2

-

50

75

mΩ

[Current Control]

Current Limit 1,2

Ilim1,2

3

4

5

A

[Output Voltage Sense]

FB threshold Voltage1,2

VFB1,2

0.788

0.8

0.812

V

FB Input current1,2

IFB1,2

-1

-

1

μA

VOUT discharge current1,2

IVOUT1,2

5

10

-

mA

VOUT=1V, VEN=0V,

VCC=5V

[SCP]

SCP threshold Voltage1,2

VSCP1,2

0.48

0.56

0.64

V

REV. A

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