BD95830MUV 查看數據表（PDF） - ROHM Semiconductor
零件编号
产品描述 (功能)
生产厂家
BD95830MUV
ROHM Semiconductor
BD95830MUV Datasheet PDF : 16 Pages
| |||
BD95830MUV
Technical Note
●Maximum Absolute Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Input Voltage
BOOT Voltage
BOOT-SW Voltage
Output Voltage
VIN1, VIN2, VINS
15.1 *1*2
V
BOOT1,BOOT2
21.1 *1*2
V
BOOT1-SW1, BOOT2-SW2
7 *1*2
V
VOUT1, VOUT2
7 *1*2
V
Output Feedback Voltage
VREG Voltage
FB1, FB2
VREG
VREG
V
7 *1*2
V
VCC Voltage
Logic Input Voltage
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
VCC
EN1, EN2
Pd1
Pd2
Pd3
Pd4
VREG
V
15.1 *1*2
V
0.38 *3
W
0.88 *4
W
3.26 *5
W
4.56 *6
W
Operating Temperature Range
Topr
-20～+100
℃
Storage Temperature Range
Tstg
-55～+150
℃
Maximum Junction Temperature
Tjmax
+150
℃
*1 Not to exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 3.04mW/℃ for each increase in Ta of 1℃ over 25℃ (when don’t mounted on a heat radiation board )
*4 Reduced by 7.04mW/℃ for increase in Ta of 1℃ over 25℃.
(when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB(1 layer), copper foil area : 20.2mm2)
*5 Reduced by 26.11mW/℃ for increase in Ta of 1℃ over 25℃.
(when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB(4 layer), copper foil area: 20.2mm2, 2-3layer: 5505mm2)
*6 Reduced by 36.5mW/℃ for increase in Ta of 1℃ over 25℃.
(when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB(4 layer), copper foil area: 5505mm2)
●Operating Conditions (Ta=25℃)
Parameter
Symbol
Input Voltage
VIN1, VIN2, VINS
BOOT Voltage
BOOT1, BOOT2
SW Voltage
SW1, SW2
BOOT-SW Voltage
BOOT1-SW1, BOOT2-SW2
Logic Input Voltage
EN1, EN2
Output Voltage
VOUT1, VOUT2
MIN ON TIME
tonmin
☆This product should not be used in a radioactive environment.
Ratings
Unit
Min.
Max.
7.5
15
V
4.5
21
V
-0.7
15
V
4.5
5.5
V
0
15
V
0.8
5.5
V
-
100
ns
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/13
2011.05 - Rev.B
Share Link: