ST1803 查看數據表（PDF） - STMicroelectronics
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ST1803 Datasheet PDF : 6 Pages
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ST1803DHI
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V Tj = 125 oC
IEBO
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = 4 V
IE = 700 mA
IC = 4 A
IC = 4 A
IB = 0.8 A
IB = 1.2 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 4 A
IB = 0.8 A
hFE∗ DC Current Gain
IC = 1 A
IC = 4.5 A
IC = 4.5 A
VCE = 5 V
VCE = 1 V
VCE = 5 V
VF
Diode Forward Voltage IF = 5 A
INDUCTIVE LOAD
IC = 4 A
ts
Storage Time
tf
Fall Time
LB = 5 µH
f = 16 KHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IBon(END) = 0.8 A
VBB = -2.5 V
(see figure 1)
Min. Typ.
130
7
3
10
15
5
5
1.5
2.7
0.3
Max.
1
2
400
5
1.5
1.2
20
9
2
4
0.6
Unit
mA
mA
mA
V
V
V
V
V
µs
µs
Safe Operating Area
Thermal Impedance
2/6
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