1PS59SB21_2 查看數據表（PDF） - Philips Electronics

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1PS59SB21_2

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

Product specification

1PS59SB21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

CONDITIONS

MIN.

see Fig.2

IF = 10 mA

−

IF = 100 mA

−

IF = 200 mA

−

VR = 30 V; note 1; see Fig.3

−

VR = 30 V; Tj = 100 °C; note 1; see Fig.3 −

f = 1 MHz; VR = 0; see Fig.4

40

MAX.

300

420

550

15

3

50

UNIT

mV

mV

mV

µA

mA

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Refer to SC-59 standard mounting conditions.

CONDITIONS

note 1

VALUE

500

UNIT

K/W

1999 May 05

3

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