1PS66SB17,115 查看數據表（PDF） - NXP Semiconductors.
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1PS66SB17,115 Datasheet PDF : 8 Pages
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Nexperia
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
102
IF
(mA)
10
1
006aaa077
(1) (2) (3) (4)
10−1
10−2
0
0.2
0.4
0.6
0.8
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values.
0.8
Cd
(pF)
0.7
105
IR
(nA) 104
006aaa078
(1)
103
(2)
102
10
(3)
1
(4)
10−1
10−2
10−3
0
1
2
3
4
VR (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values.
mlc797
0.6
0.5
0.4
0
1
2
3
4
VR (V)
Tamb = 25 °C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values.
9397 750 14587
Product data sheet
Rev. 06 — 4 April 2005
© Nexperia B.V. 2017. All rights reserved
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