2SC4125 查看數據表（PDF） - Inchange Semiconductor

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2SC4125

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4125

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB=B 2A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

ICES

Collector Cutoff Current

VCE= 1500V ; RBE= 0

IEBO

Emitter Cutoff Current

VEB= 4V ; IC= 0

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 8A ; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 10A

Switching Times

ts

Storage Time

tf

Fall Time

IC= 6A, IB1= 1.2A; IB2= -2.4A

MIN TYP. MAX UNIT

800

V

5.0

V

1.5

V

10 μA

1

mA

40

130 mA

8

4

6

2.0

V

3.0 μs

0.1 0.2 μs

isc Website：www.iscsemi.cn

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