STD13N60M2 查看數據表（PDF） - STMicroelectronics
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STD13N60M2 Datasheet PDF : 23 Pages
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STB13N60M2, STD13N60M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM(1)
PTOT
dv/dt(2)
dv/dt(3)
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
± 25
11
7
44
110
15
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)Pulse width limited by safe operating area.
(2)ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
(3)VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb(1)
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
Value
D2PAK
DPAK
1.14
30
50
Unit
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive (pulse width
limited by Tjmax.)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR;
VDD = 50 V)
Value
Unit
2.8
A
125
mJ
DocID024569 Rev 4
3/23
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