13N60M2 查看數據表（PDF） - STMicroelectronics

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13N60M2

N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STL13N60M2

(TC = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On /off states

Test conditions

Drain-source

V(BR)DSS breakdown voltage

VGS = 0, ID = 1 mA

Zero gate voltage

IDSS

drain current

IGSS

Gate-body leakage

current

VGS = 0, VDS = 600 V

VGS = 0, VDS = 600 V,

TC=125 °C

VDS = 0, VGS = ± 25 V

VGS(th)

RDS(on)

Gate threshold voltage VDS = VGS, ID = 250 μA

Static drain-source

on-resistance

VGS = 10 V, ID = 4.5 A

Min. Typ. Max. Unit

600

V

1 μA

100 μA

±10 μA

2

3

4V

0.39 0.42 Ω

Symbol

Parameter

Table 6. Dynamic

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VGS = 0, VDS = 100 V,

f = 1 MHz,

- 580 - pF

-

32

- pF

-

1.1

- pF

(1) Equivalent output

Coss eq. capacitance

VGS = 0, VDS = 0 to 480 V

- 120 - pF

Intrinsic gate

RG resistance

f = 1 MHz open drain

-

6.6

-

Ω

Qg Total gate charge

VDD = 480 V, ID = 11 A,

Qgs Gate-source charge VGS = 10 V (see Figure 15)

Qgd Gate-drain charge

-

17

- nC

-

2.5

- nC

-

9

- nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/16

DocID026363 Rev 2

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