13N60M2 查看數據表（PDF） - STMicroelectronics

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13N60M2

N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL13N60M2

Electrical characteristics

Symbol

Table 7. Switching times

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 5.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and 19)

Min. Typ. Max. Unit

- 11 - ns

- 10 - ns

- 41 - ns

- 9.5 - ns

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

(1)

ISDM

(2)

VSD

Source-drain current

Source-drain current (pulsed)

Forward on voltage

VGS = 0, ISD = 7 A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/μs

VDD = 60 V (see Figure 16)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/μs

VDD = 60 V, Tj=150 °C

(see Figure 16)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

-

7A

-

28 A

-

1.6 V

- 297

ns

- 2.8

μC

- 18.5

A

- 394

ns

- 3.8

μC

- 19

A

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