13N60M2 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
13N60M2
N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package
STMicroelectronics
13N60M2 Datasheet PDF : 16 Pages
| |||
Electrical characteristics
STL13N60M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
GIPG130520141013SA
(A)
10
10µs
1
0.1
0.01
0.1
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
10
100 VDS(V)
Figure 4. Output characteristics
ID
AM15712v1
(A)
VGS=7, 8, 9, 10V
20
6V
16
Figure 3. Thermal impedance
K
δ=0.5
ZthPowerFlat_5x6_19
0.2
10-1 0.1
0.05
0.02
0.01
10-2
Single pulse
10-3
10-6 10-5 10-4 10-3 10-2 10-1 10 tp(s)
Figure 5. Transfer characteristics
ID (A)
AM15713v1
20
VDS=18V
16
12
12
8
5V
8
4
4V
0
0
4
8
12
16
VDS(V)
Figure 6. Normalized VBR(DSS) vs temperature
VBR(DSS)
(norm)
ID=1 mA
AM15714v1
1.1
1.06
1.02
0.98
0.94
0.9
-50
0
50
100
TJ(°C)
4
0
0
2
4
6
8
VGS(V)
Figure 7. Static drain-source on-resistance
RDS(on)
(Ω)
0.415
0.410
VGS=10V
AM15912v1
0.405
0.400
0.395
0.390
0.385
0.380
0.375
0
2
4
6
8 10 ID(A)
6/16
DocID026363 Rev 2
Share Link: