13N60M2 查看數據表（PDF） - STMicroelectronics
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13N60M2
N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package
STMicroelectronics
13N60M2 Datasheet PDF : 16 Pages
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STL13N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
VDS
10
VDD=480V
ID=11A
AM15716v1
VDS
(V)
500
8
400
6
300
4
200
2
100
Figure 9. Capacitance variations
C
(pF)
AM15717v1
1000
Ciss
100
Coss
10
1
Crss
0
0
0
4
8
12
16 Qg(nC)
0.1
0.1
1
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15718v1
1.1
ID=250µA
1.0
0.9
0.8
0.7
0.6
-50
0
50
100
TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.3
2.1
1.9
ID= 4.5 A
VGS= 10 V
AM15916v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD (V)
1
TJ=-50°C
AM15720v1
0.9
TJ=25°C
0.8
0.7
TJ=150°C
0.6
Figure 13. Output capacitance stored energy
Eoss(µJ)
AM15721v1
4
3
2
1
0.5
0
2
4
6
8
10 ISD(A)
0
0 100 200 300 400 500 VDS(V)
DocID026363 Rev 2
7/16
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