FCP13N60N 查看數據表（PDF） - Fairchild Semiconductor
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FCP13N60N Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
40
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
*Notes:
1. 250μs Pulse Test
3
0.6 1
2. TC = 25oC
10
20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.8
0.6
0.4
VGS = 10V
0.2
VGS = 20V
0.0
0
*Notes: TC = 25oC
10
20
30
40
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
50000
10000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
100
Coss
10
1
0.1
*Notes:
Crss
1. VGS = 0V
2. f = 1MHz
1
10
100
600
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
60
10
1
0.2
2
150oC
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
4
6
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
VDS = 380V
8
VDS = 480V
6
4
2
*Notes: ID = 6.5A
0
0
10
20
30
40
Qg, Total Gate Charge [nC]
FCP13N60N / FCPF13N60NT Rev. A
3
www.fairchildsemi.com
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