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CRCW2512200RFKEH 查看數據表(PDF) - Vishay Semiconductors

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产品描述 (功能)
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CRCW2512200RFKEH
Vishay
Vishay Semiconductors Vishay
CRCW2512200RFKEH Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
www.vishay.com
D/CRCW e3
Vishay
TESTS AND REQUIREMENTS
All executed tests are carried out in accordance with the
following specifications:
EN 60115-1, generic specification
EN 60115-8 (successor of EN 140400), sectional
specification
EN 140401-802, detail specification
IEC 60068-2-xx, test methods
The parameters stated in the Test Procedures and
Requirements table are based on the required tests and
permitted limits of EN 140401-802. The table presents only
the most important tests, for the full test schedule refer to
the documents listed above. However, some additional
tests and a number of improvements against those
minimum requirements have been included.
The testing also covers most of the requirements specified
by EIA/IS-703 and JIS-C-5201-1.
The tests are carried out under standard atmospheric
conditions in accordance with IEC 60068-1, 4.3, whereupon
the following values are applied:
Temperature: 15 °C to 35 °C
Relative humidity: 25 % to 75 %
Air pressure: 86 kPa to 106 kPa (860 mbar to 1060 mbar).
A climatic category LCT / UCT / 56 is applied, defined by the
lower category temperature (LCT), the upper category
temperature (UCT), and the duration of exposure in the
damp heat, steady state test (56 days). The components are
mounted for testing on boards in accordance with EN
60115-8, 2.4.2 unless otherwise specified.
TEST PROCEDURES AND REQUIREMENTS
EN
60115-1
CLAUSE
IEC
60082-2 (1)
TEST
METHOD
TEST
PROCEDURE
Stability for product types:
D/CRCW e3
REQUIREMENTS PERMISSIBLE
CHANGE (R)
STABILITY CLASS 1 STABILITY CLASS 2
OR BETTER
OR BETTER
1 to 10 M
4.5
-
Resistance
-
±1%
±5%
4.8
-
Temperature coefficient
At (20 / -55 / 20) °C and
(20 / 155 / 20) °C
± 100 ppm/K
± 200 ppm/K
U = P70 x R or U = Umax.
whichever is the less severe;
4.25.1
-
Endurance at 70 °C
1.5 h on; 0.5 h off
70 °C; 1000 h
± (1 % R + 0.05 ) ± (2 % R + 0.1 )
70 °C; 8000 h
± (2 % R + 0.1 )
± (4 % R + 0.1 )
4.25.3
-
Endurance at upper
category temperature
155 °C; 1000 h
± (1 % R + 0.05 ) ± (2 % R + 0.1 )
4.24
78 (Cab) Damp heat, steady state
(40 ± 2) °C; 56 days;
(93 ± 3) % RH
± (1 % R + 0.05 )
(85 ± 2) °C; (85 ± 5) % RH;
4.37
67 (Cy)
Damp heat, steady state,
accelerated
U = 0.1 x P85 x R 100 V;
± (1 % R + 0.05 ) ± (2 % R + 0.1 )
1000 h
4.23
-
Climatic sequence:
4.23.2
2 (Bb)
Dry heat
125 °C; 16 h
4.23.3
30 (Db)
Damp
55 °C; 24 h; 90 % RH; 1 cycle
4.23.4
4.23.5
1 (Ab)
13 (M)
Cold
Low air pressure
-55 °C; 2 h
8.5 kPa; 2 h; (25 ± 10) °C
± (1 % R + 0.05 ) ± (2 % R + 0.1 )
4.23.6
30 (Db)
Damp heat, cyclic
55 °C; 5 days;
> 90 % RH; 5 cycles
4.23.7
-
-
1 (Aa)
DC load
Cold
U = P70 x R Umax.; 1 min
-55 °C; 2 h
± (0.25 % R + 0.05 ) ± (0.5 % R + 0.05 )
4.19
14 (Na)
Rapid change
of temperature
30 min. at -55 °C and 30 min. at 125 °C
1000 cycles
± (1 % R + 0.05 )
no visible damage
4.13
-
Short time overload
U = 2.5 x P70 x R 2 x Umax.;
whichever is the less severe; 5 s
± (2 % R + 0.05 )
Severity no. 4:
4.27
-
Single pulse high voltage
overload
U = 10 x P70 x R
or U = 2 x Umax.;
whichever is the less severe;
10 pulses 10 μs / 700 μs
± (1 % R + 0.05 )
no visible damage
Revision: 18-Jun-2018
7
Document Number: 20035
For technical questions, contact: thickfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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