1N5822(1999) 查看數據表（PDF） - STMicroelectronics

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1N5822
(Rev.:1999)

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

1N582x

Fig. 6-1: Reverse leakage current versus reverse

voltage applied (typical values) (1N5820/1N5821).

Fig. 6-2: Reverse leakage current versus reverse

voltage applied (typical values) (1N5822).

IR(mA)

1E+2

1E+1

Tj=125°C

1N5820

1N5821

IR(mA)

5E+1

1E+1

Tj=125°C

1E+0

Tj=100°C

1E+0

Tj=100°C

1E-1

1E-1

1E-2

1E-3

0

Tj=25°C

1E-2

Tj=25°C

VR(V)

VR(V)

1E-3

5

10

15

20

25

30

0 5 10 15 20 25 30 35 40

Fig. 7-1: Forward voltage drop versus forward Fig. 7-2: Forward voltage drop versus forward

current (typical values) (1N5820/1N5821).

current (typical values) (1N5822).

IFM(A)

50.00

10.00

Tj=125°C

1.00

0.10

Tj=100°C

Tj=25°C

VFM(V)

0.01

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

IFM(A)

50.00

10.00

Tj=125°C

1.00

0.10

Tj=100°C

Tj=25°C

VFM(V)

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig. 8: Non repetitive surge peak forward current

versus number of cycles.

IFSM(A)

100

80

60

40

20

0

1

F=50Hz Tj initial=25°C

Number of cycles

10

100

1000

4/5

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