DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SD2581 查看數據表(PDF) - SANYO -> Panasonic

零件编号
产品描述 (功能)
生产厂家
2SD2581 Datasheet PDF : 4 Pages
1 2 3 4
Continued from preceiding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
2SD2581
Symbol
Conditons
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
IC=8A, IB=1.6A
IC=8A, IB=1.6A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=6A, IB1=1.2A, IB2=–2.4A
Switching Time Test Circuit
Ratings
Unit
min
typ max
5V
1.5 V
20
35
5
8
0.3 µs
PW=20µs
DC1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
VBE=–2V
OUTPUT
+
470µF
RL=33.3
VCC=200V
I C - VCE
10
1.4A 1.6A 1.8A 2.0A
9
8
7
6
5
4
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
3
2
1
0
IB= 0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
hFE - I C
7
5
Ta = 120˚C
3
25˚C
2
-40˚C
10
7
5
VCE= 5V
3
2
1.0
77 0.1
2 3 5 7 1.0
2 3 5 7 10
2
Collector Current, IC – A
11 VCE= 5V
10
I C - VBE
9
8
7
6
5
4
3
2
1
00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
7 IC/ IB= 5
5
VCE(sat) - I C
3
2
1.0
7
5
3
2
0.1
Ta = -40˚C
25˚C
7
5 120˚C
37 0.1
2 3 5 7 1.0
2 3 5 7 10
2
Collector Current, IC – A
No.5818-2/4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]