IXTA76N25T 查看數據表（PDF） - IXYS CORPORATION
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IXTA76N25T Datasheet PDF : 6 Pages
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IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs
VDS= 10V, ID = 0.5 • ID25, Note 1
43
72
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
4500
pF
480
pF
46
pF
td(on)
22
ns
tr
Resistive Switching Times
25
ns
td(off)
tf
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
56
29
ns
ns
Qg(on)
Qgs
Qgd
RthJC
RthCH
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A
TO-220
TO-3P, TO-247
92
28
21
0.50
0.21
nC
nC
nC
0.27 °C /W
°C W
°C W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
IF = 38A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
QRM
Characteristic Values
Min. Typ.
Max.
76 A
200 A
1.5 V
148
ns
21
A
1.6
μC
Notes: 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
*: Current may be limited by external lead limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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