40QR21 查看數據表（PDF） - Toshiba

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40QR21

40QR21 / Discrete IGBTs Silicon N-Channel IGBT

Toshiba 

GT40QR21

6.2. Dynamic Characteristics (Ta = 25, unless otherwise specified)

Characteristics

Input capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Switching loss (turn-off switching loss)

Switching loss (turn-off switching loss)

Reverse recovery time

Symbol

Test Condition

Cies VCE = 10 V, VGE = 0 V,

f = 1 MHz

tr

ton

tf

toff

Eoff(1)

Resistive load

VCC = 600 V, IC = 40 A,

VGG = ±15 V, RG = 39 Ω

See Fig. 6.2.1, 6.2.2.

Inductive Load

VCC = 280 V, IC = 40 A,

L = 30 µH,C = 0.33 µF,

VGG = 20 V, RG = 10 Ω

See Fig. 6.2.3, 6.2.4.

Eoff(2)

Inductive Load

VCC = 280 V, IC = 40 A,

L = 30 µH,C = 0.33 µH,

VGG = 20 V, RG = 10 Ω

Tc = 125

See Fig. 6.2.3, 6.2.4.

trr IF = 15 A, VGE = 0 V,

di/dt = -20 A/µs

Min Typ. Max Unit

 1500 

pF



0.12



µs



0.18





0.20 0.40



0.40





0.16



mJ



0.29





0.60



µs

Fig. 6.2.1 Test Circuit of Switching Time

Fig. 6.2.2 Timing Chart of Switching Time

Fig. 6.2.3 Test Circuit of Switching Loss

Fig. 6.2.4 Timing Chart of Switching Loss

4

2011-06-06

Rev.1.0

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