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MAC97 查看數據表(PDF) - ON Semiconductor

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MAC97 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MAC97 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
RqJC
RqJA
TL
Max
Unit
75
°C/W
200
°C/W
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM, IRRM
TJ = 25°C
TJ = +110°C
10
100
ON CHARACTERISTICS
Peak On−State Voltage
(ITM = ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM
1.9
IGT
5.0
5.0
5.0
7.0
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
VGT
.66 2.0
.77 2.0
.84 2.0
.88 2.5
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TJ = 110°C)
All Four Quadrants
VGD
0.1
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
DYNAMIC CHARACTERISTICS
IH
1.5 10
tgt
2.0
Critical Rate−of−Rise of Commutation Voltage
(VD = Rated VDRM, ITM = .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, TC = 50°C)
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, TC = 110°C, Gate Open, Exponential Waveform
dV/dt(c)
5.0
dv/dt
25
Unit
mA
mA
V
mA
V
V
mA
ms
V/ms
V/ms
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