IRF5210S 查看數據表（PDF） - International Rectifier

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IRF5210S

HEXFET® Power MOSFET

International Rectifier 

1000

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

IRF5210S/L

1000

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

10

-4.5V

40µs PULSE W IDTH

1

Tc = 25°C

A

0.1

1

10

100

-VD S , D rain-to-S ourc e V oltage (V )

Fig 1. Typical Output Characteristics

10

1

0.1

-4.5V

40µs PULSE W IDTH

TC = 175°C

A

1

10

100

-VD S , D rain-to-S ource V oltage (V )

Fig 2. Typical Output Characteristics

1000

100

TJ = 25°C

TJ = 17 5 °C

10

VDS = -50V

40µs PULSE W IDTH

1

4

5

6

7

8

9

10 A

-VG S , Ga te -to-Source Volta ge (V)

Fig 3. Typical Transfer Characteristics

3.0

ID = -35A

2.5

2.0

1.5

1.0

0.5

0.0

VG S = -10 V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Tem perature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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