IRF5210L 查看數據表（PDF） - International Rectifier
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IRF5210L Datasheet PDF : 10 Pages
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IRF5210S/L
6000
5000
4000
3000
2000
C iss
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH OR TE D
C rss = C gd
C oss = C ds + C gd
C oss
Crss
1000
0
A
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I D = -21A
16
12
VDS = -80V
VDS = -50V
VDS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
TJ = 1 75 °C
TJ = 25°C
10
1
VGS = 0V A
0.4
0.8
1.2
1.6
2.0
2.4
-VSD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
10µs
100
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10m s
1
10
100
-VDS , D rain-to-S ourc e V oltage (V )
A
1000
Fig 8. Maximum Safe Operating Area
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