KA5L0565RTU 查看數據表（PDF） - Fairchild Semiconductor

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KA5L0565RTU

Fairchild Power Switch(FPS™)

Fairchild Semiconductor 

KA5L0565R

Electrical Characteristics (SenseFET part)

(Ta=25°C unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Symbol

BVDSS

Zero Gate Voltage Drain Current

IDSS

Static Drain-Source on Resistance (Note)

Forward Transconductance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn Off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

RDS(ON)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

Condition

VGS=0V, ID=50µA

VDS=Max., Rating,

VGS=0V

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

VGS=10V, ID=2.5A

VDS=50V, ID=2.5A

VGS=0V, VDS=25V,

f=1MHz

VDD=0.5BVDSS, ID=5.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

VGS=10V, ID=5.0A,

VDS=0.5BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

Min. Typ. Max. Unit

650 -

-

V

-

- 50 µA

-

- 200 µA

- 1.76 2.2 Ω

2.5 -

-

S

- 1457 -

- 130 - pF

- 38.8 -

-

- 60

-

- 150

nS

-

- 300

-

- 130

-

- 56

- 10.3 - nC

- 22.3 -

3

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