AP4511GM 查看數據表（PDF） - Advanced Power Electronics Corp
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AP4511GM Datasheet PDF : 7 Pages
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N-Channel
14
12
I D =7A
V DS =28V
10
8
6
4
2
0
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
10us
1ms
1
10ms
0.1
T A =25 o C
Single Pulse
100ms
1s
0.01
0.1
DC
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V DS =5V
T j =25 o C
20
T j =150 o C
10
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
AP4511GM
f=1.0MHz
1000
C iss
C oss
100
C rss
10
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
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