MTP36N06V 查看數據表（PDF） - Motorola => Freescale

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MTP36N06V

TMOS V Power Field Effect Transistor

Motorola => Freescale 

MTP36N06V

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

Vdc

—

61

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 °C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

2.0

2.6

4.0

Vdc

—

6.0

—

mV/°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 32 Adc)

(VGS = 10 Vdc, ID = 16 Adc, TJ = 150 °C)

Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 32 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 32 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 32 Adc, VGS = 0 Vdc)

(IS = 32 Adc, VGS = 0 Vdc, TJ = 150 °C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.034

0.04

Ohm

Vdc

—

1.25

1.54

—

—

1.47

5.0

7.83

—

mhos

—

1220

1700

pF

—

337

470

—

74.8

150

—

14

30

ns

—

138

270

—

54

100

—

91

180

—

39

50

nC

—

7.0

—

—

17

—

—

13

—

Vdc

—

1.03

2.0

—

0.94

—

Reverse Recovery Time

(IS = 32 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

92

—

ns

—

64

—

—

28

—

—

0.332

—

µC

3.5

nH

—

4.5

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

nH

—

7.5

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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