19NF20 查看數據表（PDF） - STMicroelectronics
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19NF20
STMicroelectronics
19NF20 Datasheet PDF : 16 Pages
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STB19NF20 - STF9NF20 - STP19NF20
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=100 V, ID= 7.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
VDD = 100 V, ID = 7.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
Min. Typ. Max. Unit
11.5
ns
22
ns
19
ns
11
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=15A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=15A, VDD=50V
di/dt = 100A/µs,
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=15A, VDD=50V
di/dt = 100A/µs,
Tj=150°C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max Unit
15 A
60 A
1.6 V
125
ns
0.55
µC
8.8
A
148
ns
0.73
µC
9.9
A
5/16
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