MAC210-4 查看數據表（PDF） - Motorola => Freescale
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MAC210-4 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes
(MAC210A Series)
MAC210
Series
MAC210A
Series
TRIACs
10 AMPERES RMS
200 thru 800 VOLTS
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC210-4, MAC210A4
MAC210-6, MAC210A6
MAC210-8, MAC210A8
MAC210-10, MAC210A10
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
On-State Current RMS (TC = +70°C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
10
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by Rated Current
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
100
Amps
I2t
40
A2s
Peak Gate Power
(TC = +70°C, Pulse Width = 10 µs)
PGM
20
Watts
Average Gate Power (TC = +70°C, t = 8.3 ms)
PG(AV)
0.35
Watt
Peak Gate Current
(TC = +70°C, Pulse Width = 10 µs)
IGM
2
Amps
Operating Junction Temperature Range
TJ
–40 to +125
°C
Storage Temperature Range
Tstg
–40 to +125
°C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
3–75
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