MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC210FP/D
Triacs
Silicon Bidirectional Thyristors
MAC210FP
Series
MAC210AFP
Series
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC210FP Series)
or Four Modes (MAC210AFP Series)
MT2
MT1
G
ISOLATED TRIACs
THYRISTORS
10 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC210-4FP, MAC210A4FP
MAC210-6FP, MAC210A6FP
MAC210-8FP, MAC210A8FP
MAC210-10FP, MAC210A10FP
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
preceded and followed by rated current
Symbol
VDRM
IT(RMS)
ITSM
Value
200
400
600
800
10
100
Unit
Volts
Amps
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)
Average Gate Power (TC = +70°C, t = 8.3 ms)
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)
p RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
0.35
2
1500
–40 to +125
–40 to +125
Watts
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.2
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2.ThecasetemperaturereferencepointforallTCmeasurements isapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1995