25TTS08PBF 查看數據表（PDF） - Vishay Semiconductors
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25TTS08PBF Datasheet PDF : 7 Pages
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25TTS...PbF High Voltage Series
Phase Control SCR, 25 A Vishay High Power Products
1000
100
TJ = 25 °C
TJ = 125 °C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 10 V, 20 Ω
tr = 0.5 µs, tp ≥ 6 µs
10 b) Recommended load line for
(a)
≤ 30 % rated dI/dt: 10 V, 65 Ω
tr = 1 µs, tp ≥ 6 µs
(b)
1
VGD
IGD
0.1
0.001
0.01
25TTS.. Series
0.1
1
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(4) (3)
(2) (1)
Frequency limited by PG(AV)
10
100
10
Steady state value
(DC operation)
1
0.1
0.01
0.0001
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
25TTS.. Series
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
Document Number: 94385
Revision: 11-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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