VS-25TTS08FPPBF 查看數據表（PDF） - Vishay Semiconductors
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VS-25TTS08FPPBF Datasheet PDF : 7 Pages
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VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AB FULL-PAK (94/V0)
VALUES
- 40 to 125
UNITS
°C
1.5
62
°C/W
1.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
25TTS08FP
25TTS12FP
130
25TTS.. Series
120
RthJC (DC) = 1.5 °C/ W
110
100
Conduc tion Angle
30°
90
60°
90°
120°
80
180°
70
0
5
10
15
20
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
25
180°
120°
20
90°
60°
30°
15
RMSLimit
10
5
0
0
Conduction Angle
25TTS.. Series
TJ= 125°C
4
8
12
16
20
Avera ge On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
130
25TTS.. Series
120
RthJC(DC) = 1.5 °C/ W
110
Conduc tion Period
100
90
30° 60°
80
90°
120°
180° DC
70
0
5 10 15 20 25 30
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
35
DC
30
180°
120°
90°
25
60°
30°
20
RMSLimit
15
Conduc tion Period
10
25TTS.. Series
5
TJ= 125°C
0
0
5 10 15 20 25 30
Avera ge On-sta te Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 15-Nov-11
3
Document Number: 94384
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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