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MCP6407 查看數據表(PDF) - Microchip Technology

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产品描述 (功能)
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MCP6407
Microchip
Microchip Technology Microchip
MCP6407 Datasheet PDF : 44 Pages
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MCP6401/1R/1U/2/4/6/7/9
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
VDD – VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN-)†† .......... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (TJ) .......................... +155°C
ESD Protection on All Pins (HBM; MM; CDM)....≥ 4 kV; 300V,
1500V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
†† See Section 4.1.2 “Input Voltage Limits”.
1.2 MCP6401/1R/1U/2/4 Electrical Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8v to +6.0v, VSS = GND,
VCM = VDD/2, VOUT VDD/2, VL = VDDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Temp
Parts
(Note 1)
Conditions
Input Offset
Input Offset Voltage
VOS
-4.5
±0.8
+4.5 mV
E, H VCM = VSS
±1.0
mV +125°C E
±1.5
mV +150°C H
Input Offset Drift with ΔVOS/ΔTA
Temperature
±2.0
µV/°C -40°C
E
VCM = VSS
to
+125°C
±2.5
— µV/°C -40°C
H
to
+150°C
Power Supply
Rejection Ratio
PSRR
63
78
75
dB
E, H VCM = VSS
dB +125°C E
73
dB +150°C H
Input Bias Current and Impedance
Input Bias Current
IB
1
100
pA
E, H
30
pA +85°C E, H
800
pA +125°C E
7
nA +150°C H
Input Offset Current
IOS
1
pA
E, H
5
pA +85°C E, H
20
pA +125°C E
45
pA +150°C H
Note 1: E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
2: Figure 2-14 shows how VCMR changes across temperature.
© 2009-2011 Microchip Technology Inc.
DS22229D-page 3

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