A743 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

A743

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA743, 2SA743A

Electrical Characteristics (Ta = 25°C)

2SA743

2SA743A

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V(BR)CBO

–50 —

—

–80 —

—V

IC = –1 mA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

–50 —

—

–80 —

—V

IC = –10 mA, RBE = ∞

Emitter to base

breakdown voltage

V(BR)EBO

–4

—

—

–4

—

—V

IE = –1 mA, IC = 0

Collector cutoff current ICER

— — –20 — — — µA VCE = –50 V, RBE = 1

kΩ

I CER

DC current tarnsfer ratio hFE*1

— — — — — –20

60 120 200 60 120 200

VCE = –80 V, RBE = 1

kΩ

VCE = –4 V, IC = –50

mA

hFE

20 — — 20 — —

VCE = –4 V, IC = –1 A

(pulse)

Base to emitter voltage VBE

— –0.65 –1.0 — –0.65 1.0 V

VCE = –4 V, IC = –50

mA

Collector to emitter

saturation voltage

VCE(sat)

—

–0.75 –1.5 —

–0.75 –1.5 V

IC = –1 A, IB = –0.1 A

Gain bandwidth product fT

— 120 — — 120 — MHz VCE = –4 V, IC = –30

mA

Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows.

B

60 to 120

C

100 to 200

2

Share Link: