2SK3711 查看數據表（PDF） - Sanken Electric co.,ltd.
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2SK3711 Datasheet PDF : 9 Pages
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60V N -ch MOSFET
2SK3711
December 2005
Electrical characteristics
Characteristic
Drain to Source breakdown Voltage
Symbol
Test Conditions
V(BR)DSS ID=100μA,VGS=0V
MIN
60
Gate to Source Leakage Current
IGSS VGS=±15V
Drain to Source Leakage Current
IDSS VDS=60V, VGS=0V
Gate Threshold Voltage
VTH VDS=10V, ID=1mA
2.0
Forward Transconductance
Re(Yfs) VDS=10V, ID=35A
30
Static Drain to Source On-Resistance RDS(ON) ID=35A, VGS=10V
Input Capacitance
Ciss
VDS=10V
Output Capacitance
Reverse Transfer Capacitance
Coss VGS=0V
Crss
f=1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
ID=35A, VDD≈20V
RL=0.57Ω,
VGS=10V
Rg=22Ω
Refer to Fig. 2
Source-Drain Diode Forward Voltage
Source-Drain Diode Recovery Time
VSD
trr
ISD=50A,VGS=0V
ISD=25A,
di/dt=50A/μs
Limits
TYP
(Ta=25°C)
Unit
MAX
V
±10
μA
100
μA
3.0
4.0
V
80
S
5.0
6.0
mΩ
8000
1250
pF
1000
110
100
ns
440
160
0.9
1.5
V
100
ns
Sanken Electric Co.,Ltd.
2/9
T02-002EA-051124
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