SMCGLCE10 查看數據表（PDF） - Microsemi Corporation
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SMCGLCE10 Datasheet PDF : 4 Pages
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SCOTTSDALE DIVISION
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
GRAPHS
Test wave form
parameterxs
tr = 10 μs
tp = 1000 μs
tp – Pulse Time – sec
FIGURE 1 PEAK PULSE POWER vs. PULSE TIME
FIGURE 2 PULSE WAVEFORM
T – Temperature – oC
FIGURE 3 DERATING CURVE
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage VC. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or
“SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional
applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The
unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
FIGURE 4
TVS with internal low
capacitance rectifier diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 6
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
Copyright © 2005
6-06-2005 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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