Typical Characteristics
-1000
-800
-600
-400
-200
0
0
IB = -15mA
IB = -10mA
IB = -7mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
IB = 0
-2
-4
-6
-8
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
IC = 10 IB
-1
-0.1
VCE(sat)
-0.01
-0.1
-1
-10
-100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Collector-Emitter Saturation Voltage
-1000
-100
Single pulse
DC
T
C
=
25O℃perating
-1-10
--11
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
1000
100
VCE = -5V
10
-1
-10
-100
-1000
Ic[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
-100
-10
-1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
TC
Ta
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001