BC327 查看數據表（PDF） - General Semiconductor

零件编号

产品描述 (功能)

生产厂家

BC327

Small Signal Transistors (PNP)

General Semiconductor 

BC327, BC328

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

DC Current Gain

at –VCE = 1 V, –IC = 100 mA

Current Gain Group-16 hFE

-25 hFE

-40 hFE

at –VCE = 1 V, –IC = 300 mA

Current Gain Group-16 hFE

-25 hFE

-40 hFE

100

160

250

160

250

400

250

400

630

60

130

–

100

200

–

170

320

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

2001)

Collector-Emitter Cutoff Current

at –VCE = 45 V

at –VCE = 25 V

BC327 –ICES

–

2

100

BC328 –ICES

–

2

100

at –VCE = 45 V, Tamb = 125 °C

BC327 –ICES

–

–

10

at –VCE = 25 V, Tamb = 125 °C

BC328 –ICES

–

–

10

Collector-Emitter Breakdown Voltage

at –IC = 10 mA

BC327 –

45

–

–

BC328

V(BR)CEO

25

–

–

–

V(BR)CEO

Collector-Emitter Breakdown Voltage

at –IC = 0.1 mA

BC327 –

50

–

–

BC328

V(BR)CES

30

–

–

–

V(BR)CES

Emitter-Base Breakdown Voltage

at –IE = 0.1 mA

–

5

–

–

V(BR)EBO

Collector Saturation Voltage

at –IC = 500 mA, –IB = 50 mA

–VCEsat

–

–

0.7

Base-Emitter Voltage

at –VCE = 1 V, –IC = 300 mA

–VBE

–

–

1.2

Gain-Bandwidth Product

fT

–

100

–

at –VCE = 5 V, –IC = 10 mA, f = 50 MHz

Collector-Base Capacitance

at –VCB = 10 V, f = 1 MHz

CCBO

–

12

–

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Unit

–

–

–

–

–

–

K/W

nA

nA

µA

µA

V

V

V

V

V

V

V

MHz

pF

Share Link: