2SD1640 查看數據表（PDF） - Panasonic Corporation
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2SD1640 Datasheet PDF : 3 Pages
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Power Transistors
2SD1640
Silicon NPN epitaxial planar type darlington
For low-frequency output amplification
■ Features
• High forward current transfer ratio hFE
• Large peak collector current ICP
• High collector-emitter voltage (Base open) VCEO
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
120
V
Collector-emitter voltage (Base open) VCEO
100
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
2
A
Peak collector current
ICP
3
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
C
B
E
≈ 200 Ω
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1.0 A, IB = 1.0 mA
IC = 1.0 A, IB = 1.0 mA
120
100
5
4 000
V
V
V
0.1
µA
1
µA
40 000
1.5
V
2.0
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: May 2003
SJD00209BED
1
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