Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2773
DESCRIPTION
·
·With MT-200 package
·High current capability
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
6
UNIT
V
V
V
IC
Collector current
15
A
IB
Base current
5
A
PC
Collectorl power dissipation
TC=25℃
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃