2N4117A 查看數據表（PDF） - Vishay Semiconductors
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2N4117A Datasheet PDF : 5 Pages
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2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation (case 25_C) :
(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
4117
4118
4119
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Currentb
Drain Cutoff Currentb
Gate-Source Forward Voltageb
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS(F)
IG = −1 mA , VDS = 0 V
VDS = 10 V, ID = 1 nA
−70
−40
−40
−40
V
−0.6 −1.8 −1
−3
−2
−6
VDS = 10 V, VGS = 0 V
30
90
80 240 200 600 mA
VGS = −20 V
VDS = 0 V
VGS = −20 V
VDS = 0 V
TA = 150_C
VGS = −10 V
VDS = 0 V
−0.2
2N
−0.4
PN
−0.2
SST
−0.2
−1
−1
−1
pA
−2.5
−2.5
−2.5 nA
−1
−1
−1
pA
−10
−10
−10
VGS = −10 V
VDS = 0 V
TA = 100_C
PN/SST
VDG = 15 V, ID = 30 mA
VDS = 10 V, VGS = −8 V
IG = 1 mA , VDS = 0 V
−0.03
−0.2
0.2
0.7
−2.5
−2.5
−2.5 nA
pA
V
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltageb
gfs
VDS = 10 V, VGS = 0 V
f = 1 kHz
gos
70 210 80 250 100 330
mS
3
5
10
2N/PN
1.2
Ciss
VDS = 10 V
SST
1.2
Crss
VGS = 0 V
f = 1 MHz
2N/PN
0.3
SST
0.3
en
VDS = 10 V, VGS = 0 V
f = 1 kHz
15
3
3
3
pF
1.5
1.5
1.5
nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NT
b. This parameter not registered with JEDEC.
www.vishay.com
2
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
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