STB24N60M2 查看數據表（PDF） - STMicroelectronics

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STB24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB24N60M2, STI24N60M2,

STP24N60M2, STW24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg

Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Datasheet − production data

TAB

2

3

1

D2PAK

TAB

TAB

123

I2PAK

3

2

1

TO-220

3

2

1

TO-247

Figure 1. Internal schematic diagram

D(2, TAB)

Features

Order codes

STB24N60M2

STI24N60M2

STP24N60M2

STW24N60M2

VDS @ TJmax

650 V

RDS(on) max ID

0.19 Ω 18 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

G(1)

S(3)

AM01476v1

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

Order codes

STB24N60M2

STI24N60M2

STP24N60M2

STW24N60M2

Table 1. Device summary

Marking

Package

24N60M2

D2PAK

I2PAK

TO-220

TO-247

Packaging

Tape and reel

Tube

May 2013

This is information on a product in full production.

DocID023964 Rev 4

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