STB24N60M2 查看數據表（PDF） - STMicroelectronics

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STB24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS Gate-source voltage

± 25

ID Drain current (continuous) at TC = 25 °C

18

ID Drain current (continuous) at TC = 100 °C

12

IDM (1) Drain current (pulsed)

72

PTOT Total dissipation at TC = 25 °C

150

dv/dt (2) Peak diode recovery voltage slope

15

dv/dt(3) MOSFET dv/dt ruggedness

50

Tstg Storage temperature

Tj Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

3. VDS ≤ 480 V

- 55 to 150

Unit

V

A

A

A

W

V/ns

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK I2PAK TO-220 TO-247

Rthj-case Thermal resistance junction-case max

Rthj-pcb Thermal resistance junction-pcb max(1)

30

Rthj-amb Thermal resistance junction-ambient max

1. When mounted on 1 inch² FR-4, 2 Oz copper board

0.83

62.5

°C/W

°C/W

50 °C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax )

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

3.5

A

180

mJ

DocID023964 Rev 4

3/22

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