MRF21060L 查看數據表（PDF） - Freescale Semiconductor
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MRF21060L Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS
40
0
35
η
−5
30
−10
25
IRL
−15
20
VDD = 28 Vdc
Pout = 60 W (PEP), IDQ = 500 mA
−20
15 Two−Tone Measurement, 100 kHz Tone Spacing
−25
10
Gps
−30
IMD
5
−35
0
−40
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
−20
VDD = 28 Vdc
40 IDQ = 700 mA, f = 2140 MHz, Channel Spacing
−25
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
35 15 DTCH
−30
30
−35
25
−40
ACPR
η
20
−45
15
Gps
−50
10
−55
5
2
4
6
8
10
12
14
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
Figure 4. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−60
16
−25
−30
VDD = 28 Vdc
f = 2140 MHz
−35 Two−Tone Measurement, 100 kHz Tone Spacing
−40
900 mA
−45
−50
−55
500 mA
700 mA
−60
−65
0.1
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
14
900 mA
13
700 mA
12
500 mA
11
VDD = 28 Vdc
f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
10
0.1
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−20
VDD = 28 Vdc
−30 IDQ = 700 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−40
3rd Order
−50
−60
5th Order
7th Order
−70
−80
0.1
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
14
−22
Pout = 60 W (PEP), IDQ = 500 mA
f = 2140 MHz
−24
Two−Tone Measurement,
13.5
100 kHz Tone Spacing
−26
IMD
−28
13
−30
Gps
−32
12.5
−34
−36
12
−38
22
24
26
28
30
32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
RF Device Data
Freescale Semiconductor
MRF21060LR3 MRF21060LSR3
5
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