H7N1004DL 查看數據表（PDF） - Renesas Electronics

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H7N1004DL

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004DL, H7N1004DS

Silicon N-Channel MOSFET

High-Speed Power Switching

Features

• Low on-resistance

RDS(on) = 25 mΩ typ.

• Low drive current

• Available for 4.5 V gate drive

Outline

REJ03G1482-0100

Rev.1.00

Nov 07, 2006

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK(L)-2)

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK-(S))

D

12 3

H7N0607DL

12 3

H7N0607DS

G

S

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Symbol

VDSS

VGSS

ID

ID (pulse)Note1

IDR

IAP Note 3

EAR Note 3

Pch Note 2

Tch

Tstg

Value

100

±20

25

75

75

15

22.5

30

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Rev.1.00 Nov 07, 2006 page 1 of 8

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