26N50 查看數據表（PDF） - Unisonic Technologies

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26N50

26A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

26N50

Preliminary

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=400V, ID=26A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=250V, ID=26A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=26A, VGS=0V

Body Diode Reverse Recovery Time

trr

IS=26A, VGS=0V,

Body Diode Reverse Recovery Charge

QRR

dIF/dt=100A/µs (Note 1)

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

90 120 nC

23

nC

52

nC

80 170 ns

250 500 ns

200 400 ns

155 320 ns

24 A

96 A

1.4 V

250

ns

1.1

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-789.a

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