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IRF054 查看數據表(PDF) - New Jersey Semiconductor

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IRF054 Datasheet PDF : 2 Pages
1 2
IRF054
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
ABVDSS/ATj
RDS(on)
VQS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Ugs
°Ed
td(on)
tr
tflofT)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ('Miller') Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min Typ Max Units
Test Conditions
60
V
VGS^OV, ID- i.omA
— 0,68
we Reference to 25°C, ID = 1.0mA
0.022
0.025 £i
2.0 4.0 V
VGS= 10V, Io = 3 1 A ®
VGS = iov, ID =45A ®
VDS = VGS, ID =250nA
20
— S(J5)
- 25
250 uA
VDS> 15V, IDS = 3 1 A ®
VDS=48V,VGS=OV
VDS = 48V
100
-100 nA
80
180
20 -- 4i nC
34 — 105
33
— -- 180
— — 100 n s
VGS = 0V, Tj - 125°C
VGS -= 2ov
VGS = -2ov
VGS=10V, 1D-45A
VDS = 3ov
VDD =3ov, ID =45A,
RG =2.350
100
6.1
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (f»mm/0.25izi. from
package)
4600
2000 — pF
VQS = OV,VDS = 25V
f = l.OMHz
340
Source-Drain Diode Ratings and Characteristics
Parameter
is
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ®
Min Typ Max Units
45* A
220
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
'on Forward Turn-On Time
"Current limited by pin diameter.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
2.5 V
280 nS
2.2 uC
Tj = 25°C, Is = 45A, VGS = 0V ®
Tj - 25°C, IF = 45A, di/dt < lOOA/ns
VDD s sov ®
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min Typ Max Units
0.83
30
°c/w
Test Conditions
Typical socket mount

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