C4505 查看數據表（PDF） - ROHM Semiconductor
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C4505 Datasheet PDF : 4 Pages
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Transistors
Power Transistor (400V, 0.1A)
2SC4505
2SC4505
zFeatures
1) High breakdown voltage. (BVCEO = 400V)
2) Low saturation voltage,
typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.
3) High switching speed, typically tf = 1.7µs at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
zPackaging specifications and hFE
Type
2SC4505
Package
MPT3
hFE
PQ
Marking
CE∗
Code
Basic ordering unit (pieces)
T100
1000
∗ Denotes hFE
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
400
Collector-emitter voltage
VCEO
400
Emitter-base voltage
VEBO
7
Collector current
0.1
IC
0.2
0.5
Collector power dissipation
PC
2
Junction temperature
Tj
150
Storage temperature
Tstg −55 to +150
∗1 Single pulse, Pw=20ms, Duty=1/2
∗2 When mounted on a 40×40×0.7mm ceramic board.
Unit
V
V
V
A (DC)
A (Pulse) ∗1
W
W ∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
Typ.
Max.
Unit
Conditions
400
−
−
V
IC=50µA
400
−
−
V
IC=1mA
7
−
−
V
IE=50µA
−
−
10
µA VCB=400V
−
−
10
µA VEB=6V
−
0.05
0.5
V
IC/IB=10mA/1mA
−
−
1.5
V
IC/IB=10mA/1mA
82
−
270
−
VCE=10V , IC=10mA
−
20
−
MHz VCE=10V , IE=−10mA , f=10MHz
−
7
−
pF VCB=10V , IE=0A , f=1MHz
−
1
−
µs IC=−100mA RL=1.5kΩ
−
5.5
−
µs
IB1=−IB2=10mA
−
1.7
−
µs VCC~−150V
Rev.D
1/3
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